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A Methodology for Estimating the Benefits From New Lock Construction

Funk, Jeffrey L.
『Transportation Quarterly』 Vol.37 No.4 pp.571-621 (1983/11)

  • 技術経営
  • Article

    URL:

    Infrared rapid thermal annealing for GaAs device fabrication

    Kohzu, Hideaki
    『Journal of Applied Physics』 Vol. 54 Issue 9 pp. 4998-5003 (with coauthors) (1983/09)

    • 技術経営
    • Article

      URL:

      Electrical properties of S implants in GaAs activated by infrared rapid thermal annealing

      Kohzu, Hideaki
      『Journal of Applied Physics』 Vol. 54 Issue 6 pp. 3121-3124 (with coauthors) (1983/06)

      • 技術経営
      • Article

        URL:

        Infrared rapid thermal annealing of Si -implanted GaAs

        Kohzu, Hideaki
        『Applied Physics Letters』 Vol. 41 Issue 8 pp. 755-758 (with coauthors) (1982/10/15)

        • 技術経営
        • Article

          URL:

          Selenium Implantation in Epitaxial Gallium Arsenide Layers

          Kohzu, Hideaki
          『Nuclear Instruments and Methods』 Vols. 182-183 Part 2 pp. 709-717 (with coauthors) (1981/04/15)

          • 技術経営
          • Article

            URL:

            Screenig and Testing Techniques for GaAs Power MESFETs

            Kohzu, Hideaki
            International Symposium for Testing & Failure Analysis (with coauthors) (1979)

            • 技術経営
            • Working Paper(outside IIR)

              URL:

              Reliability Study of GaAs MES FETs

              kohzu, Hideaki
              『IEEE Transactions on Microwave Theory and Techniques』 Vol. 24 Issue 6 pp. 321-328 (with coauthors) (1976/06)

              • 技術経営
              • Article

                URL:

                Reliability Studies of one-micron Schottky Gate GaAs FET

                Kohzu, Hideaki
                『IEDM』 p. 247 (1975)

                • 技術経営
                • Article

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